Cu contamination effect in oxynitride gate dielectrics
| dc.citation.epage | G629 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | G627 | en_US |
| dc.citation.volume | 148 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Lin, YH | en_US |
| dc.contributor.author | Pan, FM | en_US |
| dc.contributor.author | Liao, YC | en_US |
| dc.contributor.author | Chen, YC | en_US |
| dc.contributor.author | Hsieh, IJ | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:43:18Z | |
| dc.date.available | 2014-12-08T15:43:18Z | |
| dc.date.issued | 2001-11-01 | en_US |
| dc.description.abstract | We have studied the effect of Cu contamination in oxynitride gate dielectrics. Compared to thermal SiO2 with a physical thickness of 3-5 nm, the oxynitride shows a much improved Cu contamination resistance. Furthermore, the Cu contamination resistance increases with increasing nitrogen content. The mechanism of improved gate dielectric resistance to Cu is due to the strong diffusion barrier properties of oxynitride as observed by secondary ion mass spectroscopy. (C) 2001 The Electrochemical Society. | en_US |
| dc.identifier.doi | 10.1149/1.1407834 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.1407834 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29307 | |
| dc.identifier.wosnumber | WOS:000171653100044 | |
| dc.language.iso | en_US | en_US |
| dc.title | Cu contamination effect in oxynitride gate dielectrics | en_US |
| dc.type | Article | en_US |