Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2
| dc.citation.epage | 170 | en_US |
| dc.citation.issue | en_US | |
| dc.citation.spage | 167 | en_US |
| dc.citation.volume | 89 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Luo, Wun-Cheng | en_US |
| dc.contributor.author | Hou, Tuo-Hung | en_US |
| dc.contributor.author | Lin, Kuan-Liang | en_US |
| dc.contributor.author | Lee, Yao-Jen | en_US |
| dc.contributor.author | Lei, Tan-Fu | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:33:38Z | |
| dc.date.available | 2014-12-08T15:33:38Z | |
| dc.date.issued | 2013-11-01 | en_US |
| dc.description.abstract | In contrast to the irreversible transition of resistive switching induced by oxygen-vacancy filaments (VF) and metal filaments (MF) reported in the literature, this study reports coexistence and completely reversible transition of VF- and MF-induced resistive switching in a Ni/HfO2/SiOx/P+-Si device with three distinct and stable resistance states. In a dual filament model proposed, VF and MF may coexist at the same percolation path, and the formation and rupture proceed in a two-step fashion by choosing appropriate SET/RESET conditions. Exploiting the dependence of different filament compositions on resistive switching may enable new design space for future multi-level-cell resistive-switching memory. (C) 2013 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.sse.2013.08.005 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.sse.2013.08.005 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/23293 | |
| dc.identifier.wosnumber | WOS:000327291800027 | |
| dc.language.iso | en_US | en_US |
| dc.subject | RRAM | en_US |
| dc.subject | Filament | en_US |
| dc.subject | Multi-level-cell | en_US |
| dc.subject | Resistive switching | en_US |
| dc.title | Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2 | en_US |
| dc.type | Article | en_US |