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Effects of (002) beta-Ta barrier on copper chemical mechanical polishing behavior

dc.citation.epage438en_US
dc.citation.issueen_US
dc.citation.spage435en_US
dc.citation.volume529en_US
dc.citation.woscount0
dc.contributor.authorWang, Yu-Shengen_US
dc.contributor.authorChen, Kei-Weien_US
dc.contributor.authorCheng, Min-Yuanen_US
dc.contributor.authorLee, Wen-Hsien_US
dc.contributor.authorWang, Ying-Langen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentCollege of Photonicsen_US
dc.date.accessioned2014-12-08T15:29:55Z
dc.date.available2014-12-08T15:29:55Z
dc.date.issued2013-02-01en_US
dc.description.abstractThis study proposes that the corrosion resistance of copper film correlates well with underlying barrier's orientation. To test the hypothesis, we performed X-ray diffraction, conducted copper removal rate experiments after chemical mechanical polishing, and tested static potentiodynamic polarization. The results all show that copper deposited on strongly (002) oriented beta-Ta barrier layer demonstrated better chemical resistance against surface reaction with the slurry for strong copper (111) orientation. The findings were consistent with the result of the chronoamperometric test at 0.3 V in which the more passive film formed on the composite film with (002) beta-Ta underlying barrier. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.tsf.2012.06.017en_US
dc.identifier.issn0040-6090en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2012.06.017en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/21458
dc.identifier.wosnumberWOS:000315928000094
dc.language.isoen_USen_US
dc.subjectSemiconductorsen_US
dc.subjectBarriersen_US
dc.subjectChemical mechanical polishingen_US
dc.titleEffects of (002) beta-Ta barrier on copper chemical mechanical polishing behavioren_US
dc.typeArticleen_US

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