Passivation of defects in a-Si : H TFTs with 150 degrees C supercritical fluids
| dc.citation.epage | 502 | en_US |
| dc.citation.spage | 500 | en_US |
| dc.contributor.author | Yang, Po-Yu | en_US |
| dc.contributor.author | Liu, Po-Tsun | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Cheng, Yi-Li | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:11:59Z | |
| dc.date.available | 2014-12-08T15:11:59Z | |
| dc.date.issued | 2007 | en_US |
| dc.description.abstract | In this study, the supercritical fluids act the transporter and deliver H2O molecule into the a-Si:H film for repairing defects. From experiment results, superior transfer characteristic is obtained after the treatment of supercritical fluids mixed with water and propyl-alcohol. Besides, density of states is also reduced significantly during this processing. | en_US |
| dc.identifier.isbn | 978-957-28522-4-8 | en_US |
| dc.identifier.journal | IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9201 | |
| dc.identifier.wosnumber | WOS:000258177700128 | |
| dc.language.iso | en_US | en_US |
| dc.title | Passivation of defects in a-Si : H TFTs with 150 degrees C supercritical fluids | en_US |
| dc.type | Proceedings Paper | en_US |
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