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Improving Performance of InGaN/GaN Light-Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclusters

dc.citation.woscount2
dc.contributor.authorYang, M. D.en_US
dc.contributor.authorWu, S. W.en_US
dc.contributor.authorShu, G. W.en_US
dc.contributor.authorWang, J. S.en_US
dc.contributor.authorShen, J. L.en_US
dc.contributor.authorWu, C. H.en_US
dc.contributor.authorLin, C. A. J.en_US
dc.contributor.authorChang, W. H.en_US
dc.contributor.authorLin, T. Y.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:10:23Z
dc.date.available2014-12-08T15:10:23Z
dc.date.issued2009en_US
dc.description.abstractWe studied the optoelectronic properties of the InGaN/GaN multiple-quantum-well light emitting diodes (LEDs) and single-junction GaAs solar cells by introducing the luminescent Au nanoclusters. The electroluminescence intensity for InGaN/GaN LEDs increases after incorporation of the luminescent Au nanoclusters. An increase of 15.4% in energy conversion efficiency is obtained for the GaAs solar cells in which the luminescent Au nanoclusters have been incorporated. We suggest that the increased light coupling due to radiative scattering from nanoclusters is responsible for improving the performance of the LEDs and solar cells. Copyright (C) 2009 M. D. Yang et al.en_US
dc.identifier.doi10.1155/2009/840791en_US
dc.identifier.issn1687-4110en_US
dc.identifier.journalJOURNAL OF NANOMATERIALSen_US
dc.identifier.urihttp://dx.doi.org/10.1155/2009/840791en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/7937
dc.identifier.wosnumberWOS:000273380800001
dc.language.isoen_USen_US
dc.titleImproving Performance of InGaN/GaN Light-Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclustersen_US
dc.typeArticleen_US

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