Deep hole traps created by gamma-ray irradiation of GaInP
| dc.citation.epage | 6808 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 6807 | en_US |
| dc.citation.volume | 40 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Sung, WJ | en_US |
| dc.contributor.author | Liu, TY | en_US |
| dc.contributor.author | Yang, SL | en_US |
| dc.contributor.author | Huang, KF | en_US |
| dc.contributor.author | Tseng, TY | en_US |
| dc.contributor.author | Chou, FI | en_US |
| dc.contributor.author | Wei, YY | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:43:11Z | |
| dc.date.available | 2014-12-08T15:43:11Z | |
| dc.date.issued | 2001-12-01 | en_US |
| dc.description.abstract | Deep hole traps, created by gamma-ray irradiation of Al/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Two distinct deep hole traps, A and B, were observed in the irradiated GaInP samples, According to the analysis of trap concentration in various samples, the trap A is verified as a bulk defect located at 0.29 eV above the valance band. Meanwhile, the trap B is an interface state originated from the junctions of Al/Mg-doped GaInP contacts. | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29232 | |
| dc.identifier.wosnumber | WOS:000175190700025 | |
| dc.language.iso | en_US | en_US |
| dc.subject | GaInP | en_US |
| dc.subject | gamma-ray | en_US |
| dc.subject | irradiation | en_US |
| dc.subject | defect | en_US |
| dc.subject | trap | en_US |
| dc.subject | deep level | en_US |
| dc.subject | DLTS | en_US |
| dc.title | Deep hole traps created by gamma-ray irradiation of GaInP | en_US |
| dc.type | Article | en_US |