Optically and electrically pumped GaN-based VCSELs

dc.citation.epage	988	en_US
dc.citation.spage	987	en_US
dc.contributor.author	Lu, T. C.	en_US
dc.contributor.author	Kao, C. C.	en_US
dc.contributor.author	Huang, G. S.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.contributor.author	Wang, S. C.	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.date.accessioned	2014-12-08T15:17:04Z
dc.date.available	2014-12-08T15:17:04Z
dc.date.issued	2007	en_US
dc.description.abstract	We report the recent progress of GaN-based VCSELs with a hybrid cavity structure comprised an epitaxial AlN/GaN DBR with superlattice insertion layers, an InGaN/GaN MQW active region and a top dielectric DBR. The lasers achieved laser action under optical pumping at the room temperature with a narrow linewidth. The preliminary results of the electrically pumped VCSEL will also be presented.	en_US
dc.identifier.isbn	978-1-4244-1173-3	en_US
dc.identifier.journal	2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/12479
dc.identifier.wosnumber	WOS:000256956600499
dc.language.iso	en_US	en_US
dc.title	Optically and electrically pumped GaN-based VCSELs	en_US
dc.type	Proceedings Paper	en_US

Files

Now showing 1 - 1 of 1