Power PHEMT with compact device layout for low voltage CDMA application
| dc.citation.epage | 579 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 577 | en_US |
| dc.citation.volume | 36 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | Chang, EY | en_US |
| dc.contributor.author | Lee, DH | en_US |
| dc.contributor.author | Chen, SH | en_US |
| dc.contributor.author | Chang, HC | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:45:33Z | |
| dc.date.available | 2014-12-08T15:45:33Z | |
| dc.date.issued | 2000-03-16 | en_US |
| dc.description.abstract | A high efficiency low voltage operation dual delta-doped AlGaAs/ InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) for low voltage code division multiple access (CDMA) application has been developed. When tested at 2.4V and 1.9GHz under IS-95 CDMA modulation, the 20.16mm PHEMT device was found to have a linear output power of 28dBm with a power added efficiency of 30.2%. The device also has a saturation power of 30.0dBm with a power added efficiency of 61.5%. The high efficiency and linearity of the PHEMT at low bias voltage is attributed to the use of the dual delta-doped PHEMT structure and to the reduction of the size of the device layout. The device is suitable for low voltage CDMA applications. | en_US |
| dc.identifier.doi | 10.1049/el:20000360 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:20000360 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30648 | |
| dc.identifier.wosnumber | WOS:000086381000065 | |
| dc.language.iso | en_US | en_US |
| dc.title | Power PHEMT with compact device layout for low voltage CDMA application | en_US |
| dc.type | Article | en_US |