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Electron-phonon scattering times in three-dimensional disordered Sb films

dc.citation.epage3172en_US
dc.citation.issue5en_US
dc.citation.spage3170en_US
dc.citation.volume61en_US
dc.citation.woscount7en_US
dc.contributor.authorLin, JJen_US
dc.contributor.authorLi, TJen_US
dc.contributor.authorWu, TMen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.date.accessioned2019-04-03T06:39:33Z
dc.date.available2019-04-03T06:39:33Z
dc.date.issued2000-02-01en_US
dc.description.abstractWe have measured the electron-phonon scattering times t(ep) in a series of three-dimensional Sb films having the characteristic of ql similar to 1, where q is the wave number of the thermal phonons, and I is the electron elastic mean free path. We observe that 1/t(ep) similar to T-p, With P approximate to 2.4, in the temperature range 1-14 K. In addition, we find a very weak dependence of 1/t(ep) on l. Our observations are compared with theoretical predictions for electronphonon interactions in the presence of disorder and with previous experimental results in thin Sb films.en_US
dc.identifier.doi10.1103/PhysRevB.61.3170en_US
dc.identifier.issn1098-0121en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.61.3170en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/30742
dc.identifier.wosnumberWOS:000085332800012en_US
dc.language.isoen_USen_US
dc.titleElectron-phonon scattering times in three-dimensional disordered Sb filmsen_US
dc.typeArticleen_US

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