The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

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dc.citation.epage37en_US
dc.citation.spage33en_US
dc.citation.volume7en_US
dc.citation.woscount0en_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorLiu, Han-Wenen_US
dc.contributor.authorChan, Po-Chunen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2019-04-02T05:58:41Z
dc.date.available2019-04-02T05:58:41Z
dc.date.issued2019-01-01en_US
dc.description.abstractIn this paper, the reaction rate of oxygen vacancy (VO) by the derivatives of threshold voltage (Vth) in the amorphous indium-gallium-zinc oxide thin-film transistors under light pulses with altering duty ratios is investigated. More importantly, after collecting and analyzing a lot of experimental results, a comprehensive model named VO pool is proposed. The proposed model can more universally describe the characteristic of VO reacting to the light and its degradation behavior under various kinds of stress condition.en_US
dc.identifier.doi10.1109/JEDS.2018.2875930en_US
dc.identifier.issn2168-6734en_US
dc.identifier.journalIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETYen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JEDS.2018.2875930en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/148986
dc.identifier.wosnumberWOS:000460753000007en_US
dc.language.isoen_USen_US
dc.subjectAmorphous indium gallium zinc oxide (a-IGZO)en_US
dc.subjectthin-film transistors (TFTs)en_US
dc.subjectreaction rateen_US
dc.subjectillumination effecten_US
dc.subjectmultiple-pulse illuminationen_US
dc.subjectresponse timeen_US
dc.subjectoxygen vacancyen_US
dc.titleThe Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistorsen_US
dc.typeArticleen_US

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