Vertical polymer phototransistor featuring photomultiplication due to base-field shielding
| dc.citation.epage | en_US | |
| dc.citation.issue | 5 | en_US |
| dc.citation.volume | 98 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Zan, Hsiao-Wen | en_US |
| dc.contributor.author | Tsai, Wu-Wei | en_US |
| dc.contributor.author | Meng, Hsin-Fei | en_US |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Institute of Physics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:37:36Z | |
| dc.date.available | 2014-12-08T15:37:36Z | |
| dc.date.issued | 2011-01-31 | en_US |
| dc.description.abstract | We introduce a vertical polymer phototransistor with low operational voltage (-1.5 V). A blended polymer layer with both acceptor and donor materials was used as a channel material in the vertical space-charge-limited transistor. Under illumination, we obtained external quantum efficiency (EQE) as high as 360% at 620 nm. We propose the effects of base-field shielding as a means to explain high EQE. This proposition has been supported by two-dimensional simulation of the device. (C) 2011 American Institute of Physics. [doi:10.1063/1.3552714] | en_US |
| dc.identifier.doi | 10.1063/1.3552714 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3552714 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25861 | |
| dc.identifier.wosnumber | WOS:000286988400075 | |
| dc.language.iso | en_US | en_US |
| dc.title | Vertical polymer phototransistor featuring photomultiplication due to base-field shielding | en_US |
| dc.type | Article | en_US |