40-GHz coplanar waveguide bandpass filters on silicon substrate
| dc.citation.epage | 431 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 429 | en_US |
| dc.citation.volume | 12 | en_US |
| dc.citation.woscount | 25 | |
| dc.contributor.author | Chan, KT | en_US |
| dc.contributor.author | Chen, CY | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Hsieh, JC | en_US |
| dc.contributor.author | Liu, J | en_US |
| dc.contributor.author | Duh, TS | en_US |
| dc.contributor.author | Lin, WJ | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:41:48Z | |
| dc.date.available | 2014-12-08T15:41:48Z | |
| dc.date.issued | 2002-11-01 | en_US |
| dc.description.abstract | We report a very simple process to fabricate high performance filter on Si at 40 GHz; using proton implantation. The filter has only -3.4-dB loss at peak transmission of 40 GHz; with a broad 9-GHz bandwidth. In sharp contrast, the filter on 1.5-mum SiO2 isolated Si has much worse transmission and reflection loss. This is the first demonstration of high performance filter at millimeter-wave regime on Si with process compatible to current VLSI technology. | en_US |
| dc.identifier.doi | 10.1109/LMWC.2002.805535 | en_US |
| dc.identifier.issn | 1531-1309 | en_US |
| dc.identifier.journal | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LMWC.2002.805535 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28422 | |
| dc.identifier.wosnumber | WOS:000179118100004 | |
| dc.language.iso | en_US | en_US |
| dc.title | 40-GHz coplanar waveguide bandpass filters on silicon substrate | en_US |
| dc.type | Article | en_US |