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超高真空化學氣相沉積低溫新穎複晶矽薄膜電晶體之製作與可靠度分析---子計畫二:退火製程對超高真空化學氣相沈積法成長之複晶矽薄膜結構的影響與退火複晶矽薄膜電晶體的製作(III)

dc.contributor.author馮明憲en_US
dc.contributor.department國立交通大學材料科學工程研究所zh_TW
dc.date.accessioned2014-12-13T10:36:03Z
dc.date.available2014-12-13T10:36:03Z
dc.date.issued2000en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC89-2218-E009-082zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=597398&docId=112577en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/93739
dc.language.isozh_TWen_US
dc.title超高真空化學氣相沉積低溫新穎複晶矽薄膜電晶體之製作與可靠度分析---子計畫二:退火製程對超高真空化學氣相沈積法成長之複晶矽薄膜結構的影響與退火複晶矽薄膜電晶體的製作(III)zh_TW
dc.titleAnnealing Effects on UHVCVD Polysilicon Thin-Film Structure and Fabrication of Annealed Polysilicon TFT(III)en_US
dc.typePlanen_US

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