High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells
| dc.citation.epage | en_US | |
| dc.citation.issue | 9 | en_US |
| dc.citation.volume | 104 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Chang, Chiao-Yun | en_US |
| dc.contributor.author | Li, Hen | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:35:26Z | |
| dc.date.available | 2014-12-08T15:35:26Z | |
| dc.date.issued | 2014-03-03 | en_US |
| dc.description.abstract | In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20mA and a 27.0% efficiency droop at 100mA (corresponding to a current density of 69A/cm(2)), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs. (C) 2014 AIP Publishing LLC. | en_US |
| dc.identifier.doi | 10.1063/1.4867023 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4867023 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/23991 | |
| dc.identifier.wosnumber | WOS:000332729200011 | |
| dc.language.iso | en_US | en_US |
| dc.title | High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells | en_US |
| dc.type | Article | en_US |