A numerical study of dc characteristics of HEMT with p-type delta-doped barrier
| dc.citation.epage | 879 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 877 | en_US |
| dc.citation.volume | 81 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Chang, Y | en_US |
| dc.contributor.author | Kuo, YK | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:18:25Z | |
| dc.date.available | 2014-12-08T15:18:25Z | |
| dc.date.issued | 2005-09-01 | en_US |
| dc.description.abstract | The dc characteristics of an InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) with a p-type delta-doped InGaP barrier are numerically investigated with the ISE-TCAD simulation program. The simulation results indicate that a HEMT with such a structure has a higher gate turn-on voltage, better carrier confinement that results in a lower voltage-dependent transconductance, and a larger breakdown voltage when compared with the typical HEMT. The simulation results also suggest that this structure is beneficial for linear and large-signal application. | en_US |
| dc.identifier.doi | 10.1007/s00339-004-2899-0 | en_US |
| dc.identifier.issn | 0947-8396 | en_US |
| dc.identifier.journal | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/s00339-004-2899-0 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13284 | |
| dc.identifier.wosnumber | WOS:000230267700039 | |
| dc.language.iso | en_US | en_US |
| dc.title | A numerical study of dc characteristics of HEMT with p-type delta-doped barrier | en_US |
| dc.type | Article | en_US |