Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
| dc.citation.epage | 1111 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 1108 | en_US |
| dc.citation.volume | 29 | en_US |
| dc.citation.woscount | 24 | |
| dc.contributor.author | Lin, Chih-Yang | en_US |
| dc.contributor.author | Lin, Meng-Han | en_US |
| dc.contributor.author | Wu, Ming-Chi | en_US |
| dc.contributor.author | Lin, Chen-Hsi | en_US |
| dc.contributor.author | Tseng, Tseung-Yuen | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:10:51Z | |
| dc.date.available | 2014-12-08T15:10:51Z | |
| dc.date.issued | 2008-10-01 | en_US |
| dc.description.abstract | The stabilization of the resistive switching properties is necessary to realize the memory application of the SrZrO3 (SZO)-based resistive switching devices. During continuous resistive switching cycle, broad variations of the resistive switching parameters of the SZO-based memory devices can be improved by a thin embedded Cr layer. The Cr metal layer is proposed to diffuse into and dope the SZO thin film to produce the space charge region, further reducing the effective resistive switching region. Hence, the good stabilization of the resistive switching properties can be obtained in the SZO films with embedded Cr layer. | en_US |
| dc.identifier.doi | 10.1109/LED.2008.2002879 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2008.2002879 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8304 | |
| dc.identifier.wosnumber | WOS:000259812900008 | |
| dc.language.iso | en_US | en_US |
| dc.subject | nonvolatile memory (NVM) | en_US |
| dc.subject | resistive random access memory (RRAM) | en_US |
| dc.subject | resistive switching | en_US |
| dc.subject | stabilization | en_US |
| dc.subject | SrZrO3 | en_US |
| dc.title | Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer | en_US |
| dc.type | Article | en_US |