ROOM-TEMPERATURE SELECTIVE GROWTH OF DIELECTRIC FILMS BY LIQUID-PHASE DEPOSITION

Abstract

In multilevel interconnection processes, because thermal stress affects device characteristics and wiring reliability, low-temperature deposition has been required for interlayer dielectrics (SiO2). This research investigated high growth rate and selective growth conditions of room-temperature interlayer dielectrics formed using the liquid-phase deposition method. The dependence of deposition rate on growth temperature and H3BO3 concentration is confirmed, and a concentration of 3.8 mol l-1 of H2SiF6 is used to achieve a high deposition rate of 1250 angstrom h-1. The degree of supersaturation of silica of the immersing solution is found to define three ranges of growth conditions: the non-deposition range, selective deposition range, and conformal deposition range. A selective deposition model is proposed to clarify the mechanism of room-temperature selective SiO2 growth,