Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers

Abstract

In this article, the laser performance of the 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum well lasers with various GaAs1-xNx strain compensated barriers (x=0%, 0.5%, 1 %, and 2%) have been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x=0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient To values of 110 K and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs1-xNx barrier increases more than 1% the laser performance degrades rapidly and the To value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In0.4Ga0.6As0.986N0.014 QW and GaAs1-xNx barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs1-xNx quantum-well lasers are also investigated.