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Efficient hole-injection in highly transparent organic thin-film transistors

dc.citation.epageH188en_US
dc.citation.issue6en_US
dc.citation.spageH186en_US
dc.citation.volume10en_US
dc.citation.woscount11
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorLin, Yung-Shengen_US
dc.contributor.authorChen, Tung-Hsienen_US
dc.contributor.authorKung, Li-Jenen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.date.accessioned2014-12-08T15:15:07Z
dc.date.available2014-12-08T15:15:07Z
dc.date.issued2007en_US
dc.description.abstractHighly transparent organic thin-film transistors (OTFTs) based on pentacene have been demonstrated successfully. By inserting one layer of metal oxides between the transparent electrodes and the semiconductor, the device performance was enhanced dramatically. Meanwhile, the average transmittance, which is as high as 72.2%, in the visible region has been realized. The high transmittance is among the highest values reported for thin-film transistors made of organic semiconductors. Furthermore, from the results of the transfer line method, it is realized that device enhancement is contributed from reduction of the contact resistance. (c) 2007 The Electrochemical Society.en_US
dc.identifier.doi10.1149/1.2722037en_US
dc.identifier.issn1099-0062en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.2722037en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/11351
dc.identifier.wosnumberWOS:000245472500024
dc.language.isoen_USen_US
dc.titleEfficient hole-injection in highly transparent organic thin-film transistorsen_US
dc.typeArticleen_US

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