Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography
| dc.citation.epage | en_US | |
| dc.citation.issue | 8 | en_US |
| dc.citation.volume | 24 | en_US |
| dc.citation.woscount | 26 | |
| dc.contributor.author | Huang, H. W. | en_US |
| dc.contributor.author | Lin, C. H. | en_US |
| dc.contributor.author | Lee, K. Y. | en_US |
| dc.contributor.author | Yu, C. C. | en_US |
| dc.contributor.author | Huang, J. K. | en_US |
| dc.contributor.author | Lee, B. D. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.contributor.author | Leung, K. M. | en_US |
| dc.contributor.author | Wang, S. C. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:08:58Z | |
| dc.date.available | 2014-12-08T15:08:58Z | |
| dc.date.issued | 2009-08-12 | en_US |
| dc.description.abstract | GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a 12-fold photonic quasi-crystal (PQC) by nano-imprint lithography (NIL) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 mu m x 350 mu m, the light output power of our thin-film LED with a 12-fold PQC structure reaches 41 mW. This result is an enhancement of 78% when compared with the output power of a VLED without a PQC structure. In addition, the corresponding light radiation pattern shows a narrower beam shape due to the strong guided light extraction effect by the formed PQC structure in the vertical direction. | en_US |
| dc.identifier.doi | 10.1088/0268-1242/24/8/085008 | en_US |
| dc.identifier.issn | 0268-1242 | en_US |
| dc.identifier.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0268-1242/24/8/085008 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6821 | |
| dc.identifier.wosnumber | WOS:000268301000008 | |
| dc.language.iso | en_US | en_US |
| dc.title | Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography | en_US |
| dc.type | Article | en_US |