Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness
| dc.citation.epage | en_US | |
| dc.citation.issue | 26 | en_US |
| dc.citation.volume | 100 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Huang, Huei-Min | en_US |
| dc.contributor.author | Chang, Chiao-Yun | en_US |
| dc.contributor.author | Lan, Yu-Pin | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Wang, Shing-Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:23:34Z | |
| dc.date.available | 2014-12-08T15:23:34Z | |
| dc.date.issued | 2012-06-25 | en_US |
| dc.description.abstract | The defect-induced carrier localization in nonpolar a-plane (Al,Ga)N/GaN multiple quantum wells (MQWs) structures with different well thickness have been investigated. A strong variation of temperature-dependent photoluminescence peak energy was observed and attributed to the existence of the localized states. The degree of carrier localization in these defect-induced states was more prominent in the case of MQWs with the wider well width. In addition, the ultraviolet light emission efficiency revealed a 3-fold enhancement with increasing the well width from 1.6 nm to 7.3 nm, due to the strong carrier localization generated from the quantum-wire-like features formed by the intersection between basal stacking faults and quantum wells. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730438] | en_US |
| dc.identifier.doi | 261901 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/261901 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16471 | |
| dc.identifier.wosnumber | WOS:000305831500018 | |
| dc.language.iso | en_US | en_US |
| dc.title | Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness | en_US |
| dc.type | Article | en_US |