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Ultrafast carrier dynamics in Cu(In,Ga)Se-2 thin films probed by femtosecond pump-probe spectroscopy

dc.citation.epage12675en_US
dc.citation.issue12en_US
dc.citation.volume20en_US
dc.citation.woscount6
dc.contributor.authorChen, Shih-Chenen_US
dc.contributor.authorLiao, Yu-Kuangen_US
dc.contributor.authorChen, Hsueh-Juen_US
dc.contributor.authorChen, Chia-Hsiangen_US
dc.contributor.authorLai, Chih-Huangen_US
dc.contributor.authorChueh, Yu-Lunen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWu, Kaung-Hsiungen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.contributor.authorCheng, Shun-Jenen_US
dc.contributor.authorHsieh, Tung-Poen_US
dc.contributor.authorKobayashi, Takayoshien_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:23:35Z
dc.date.available2014-12-08T15:23:35Z
dc.date.issued2012-06-04en_US
dc.description.abstractUltrafast carrier dynamics in Cu(In,Ga)Se-2 films are investigated using femtosecond pump-probe spectroscopy. Samples prepared by direct sputtering and co-evaporation processes, which exhibited remarkably different crystalline structures and free carrier densities, were found to result in substantially different carrier relaxation and recombination mechanisms. For the sputtered CIGS films, electron-electron scattering and Auger recombination was observed, whereas for the co-evaporated CIGS films, bandgap renormalization accompanied by band filling effect and hot phonon relaxation was observed. The lifetime of defect-related recombination in the co-evaporated CIGS films is much longer than that in the direct-sputtered CIGS films, reflecting a better quality with higher energy conversion efficiency of the former. (c) 2012 Optical Society of Americaen_US
dc.identifier.issn1094-4087en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/16491
dc.identifier.wosnumberWOS:000305463600005
dc.language.isoen_USen_US
dc.titleUltrafast carrier dynamics in Cu(In,Ga)Se-2 thin films probed by femtosecond pump-probe spectroscopyen_US
dc.typeArticleen_US

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