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INTERBAND TUNNELING BETWEEN VALENCE-BAND AND CONDUCTION-BAND QUANTUM-WELLS IN A GASB/ALSB/INAS/ALSB/GASB/ALSB/INAS TRIPLE-BARRIER STRUCTURE

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dc.citation.epage963en_US
dc.citation.issue3en_US
dc.citation.spage960en_US
dc.citation.volume72en_US
dc.citation.woscount5
dc.contributor.authorCHEN, JFen_US
dc.contributor.authorCHO, AYen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:04:49Z
dc.date.available2014-12-08T15:04:49Z
dc.date.issued1992-08-01en_US
dc.description.abstractWe report on the experimental studies of an interband tunneling effect between GaSb valence-band and InAs conduction-band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple-barrier interband tunneling device. Multiple negative differential resistances were observed both at room temperature and 77 K. By varying the InAs well width to adjust the alignment of the conduction-band and the valence-band quasi-bound states, we observed more than one order of magnitude variation in the peak current density, indicating a significant quantization effect. Possible current conduction mechanisms were discussed based on the dependence of the peak-current density on the InAs well width.en_US
dc.identifier.doi10.1063/1.351772en_US
dc.identifier.issn0021-8979en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.351772en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/3325
dc.identifier.wosnumberWOS:A1992JF86800020
dc.language.isoen_USen_US
dc.titleINTERBAND TUNNELING BETWEEN VALENCE-BAND AND CONDUCTION-BAND QUANTUM-WELLS IN A GASB/ALSB/INAS/ALSB/GASB/ALSB/INAS TRIPLE-BARRIER STRUCTUREen_US
dc.typeArticleen_US

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