Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions
| dc.citation.epage | 5649 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 5647 | en_US |
| dc.citation.volume | 24 | en_US |
| dc.citation.woscount | 22 | |
| dc.contributor.author | Huang, Ting-Kai | en_US |
| dc.contributor.author | Chen, Ying-Chieh | en_US |
| dc.contributor.author | Ko, Hsin-Chun | en_US |
| dc.contributor.author | Huang, Hsin-Wei | en_US |
| dc.contributor.author | Wang, Chia-Hsin | en_US |
| dc.contributor.author | Lin, Huang-Kai | en_US |
| dc.contributor.author | Chen, Fu-Rong | en_US |
| dc.contributor.author | Kai, Ji-Jung | en_US |
| dc.contributor.author | Lee, Chi-Young | en_US |
| dc.contributor.author | Chiu, Hsin-Tien | en_US |
| dc.contributor.department | 應用化學系 | zh_TW |
| dc.contributor.department | Department of Applied Chemistry | en_US |
| dc.date.accessioned | 2014-12-08T15:11:22Z | |
| dc.date.available | 2014-12-08T15:11:22Z | |
| dc.date.issued | 2008-06-03 | en_US |
| dc.description.abstract | A simple galvanic reduction for direct growth of An nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4(aq) with Sn-(s) in the presence of CTAC((aq)) (cetyltrimethylammonium chloride) and NaNO3(aq), which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 mu m. | en_US |
| dc.identifier.doi | 10.1021/la8000575 | en_US |
| dc.identifier.issn | 0743-7463 | en_US |
| dc.identifier.journal | LANGMUIR | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1021/la8000575 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8731 | |
| dc.identifier.wosnumber | WOS:000256232900003 | |
| dc.language.iso | en_US | en_US |
| dc.title | Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions | en_US |
| dc.type | Article | en_US |