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Using metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverter

dc.citation.epage1640en_US
dc.citation.issue8en_US
dc.citation.spage1636en_US
dc.citation.volume10en_US
dc.citation.woscount5
dc.contributor.authorCheng, Shiau-Shinen_US
dc.contributor.authorChen, Jia-Haoen_US
dc.contributor.authorChen, Guan-Yuanen_US
dc.contributor.authorKekuda, Dhananjayen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.contributor.authorChu, Chih-Weien_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:08:10Z
dc.date.available2014-12-08T15:08:10Z
dc.date.issued2009-12-01en_US
dc.description.abstractIn this study, we investigated the influence of a buffer layer of molybdic oxide (MoO(3)) at the metal/organic junction on the behavior of organic base-modulation triodes. The performance of devices featuring MoO(3)/Al as the emitter electrode was enhanced relative to that of corresponding devices with Au and Ag, presumably because of the reduced in the contact barrier and the prevention of metal diffusion into the organic layer. The device exhibited an output current of -16.1 mu A at V(B) = -5 V and a current ON/OFF ratio of 10(3). Using this architecture, we constructed resistance-load inverters that exhibited a calculated gain of 6. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.orgel.2009.08.023en_US
dc.identifier.issn1566-1199en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2009.08.023en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/6370
dc.identifier.wosnumberWOS:000272605200035
dc.language.isoen_USen_US
dc.subjectVertical-typeen_US
dc.subjectJunctionen_US
dc.subjectTransition metal oxideen_US
dc.subjectInverteren_US
dc.titleUsing metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverteren_US
dc.typeArticleen_US

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