<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css"> Skip to main content

Characterization of BaPbO3 and Ba(Pb1-xBix)O-3 thin films

Loading...
Thumbnail Image

Journal Title

Journal ISSN

Volume Title

Publisher

DOI

10.1016/S0254-0584(02)00377-2

Abstract

BaPbO3 and Ba(Pb1-xBix)O-3 films made from barium 2-ethylhexanoate, lead 2-ethylhexanoate and bismuth acetate were prepared by metal-organic deposition (MOD) method on Pt/Ti/SiO2/Si substrate. The phase transition and the physical properties of these films were studied. The polycrystalline BaPbO3 phase starts to form above 600 degreesC and the Pb-excess addition would enhance the formation of single perovskite BaPbO3 phase. With increasing annealing temperature, the optimum sheet resistance 1.6 Omega sq(-1) (resistivity approximate to 1.07 x 10(-4) Omega cm) could be obtained at 750 degreesC. However, an annealing temperature over 800 degreesC causes reactions between substrate and BaPbO3 phase and results in sharp increase of resistance. On the other hand, the substitution of Pb by Bi in the Ba(Pb1-xBix)O-3 films could stabilize the perovskite phase, though the sheet resistance is raised over 10 Omega sq(-1) at x = 0.3. (C) 2002 Elsevier Science B.V. All rights reserved.

Description

Citation

Endorsement

Review

Supplemented By

Referenced By