2-V-operation delta-doped power HEMT's for personal handy-phone systems
| dc.citation.epage | 221 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 219 | en_US |
| dc.citation.volume | 7 | en_US |
| dc.contributor.author | Lai, YL | en_US |
| dc.contributor.author | Chang, EY | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.author | Liu, TH | en_US |
| dc.contributor.author | Wang, SP | en_US |
| dc.contributor.author | Hsu, HT | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:01:32Z | |
| dc.date.available | 2014-12-08T15:01:32Z | |
| dc.date.issued | 1997-08-01 | en_US |
| dc.description.abstract | A high-efficiency and high-power-density delta-doped AIGaAs/InGaAs HEMT with low adjacent channel leakage has been developed for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz pi/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.0-V-operation HEMT with a 1-mm gate width demonstrated a power-added efficiency of 45.3% and an output power density of 105 mW/mm. This is the highest power density ever reported by the power transistors for the PHS. The state-of-the-art results for the PHS operating at 2.0 V were achieved by the delta-doped power HEMT for the first time. | en_US |
| dc.identifier.doi | 10.1109/75.605483 | en_US |
| dc.identifier.issn | 1051-8207 | en_US |
| dc.identifier.journal | IEEE MICROWAVE AND GUIDED WAVE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/75.605483 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/372 | |
| dc.language.iso | en_US | en_US |
| dc.title | 2-V-operation delta-doped power HEMT's for personal handy-phone systems | en_US |
| dc.type | Article | en_US |