Improved 1.3-mu m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature
| dc.citation.epage | 99 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 97 | en_US |
| dc.citation.volume | 25 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Lin, Wei-Hsun | en_US |
| dc.contributor.author | Wang, Kai-Wei | en_US |
| dc.contributor.author | Lin, Shih-Yen | en_US |
| dc.contributor.author | Wu, Meng-Chyi | en_US |
| dc.contributor.department | 光電學院 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | College of Photonics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:28:43Z | |
| dc.date.available | 2014-12-08T15:28:43Z | |
| dc.date.issued | 2013-01-01 | en_US |
| dc.description.abstract | Room-temperature 1.3-mu m electroluminescence is observed for the InGaAs-capped GaSb quantum rings (QRs). The increasing carrier density in the InGaAs-capped type-II GaSb QRs would induce a larger blue shift in the same laser pumping power span and enhance the luminescence intensity. The enhanced luminescence intensity, a larger blue shift of peak wavelength, and 1.3-mu m emission of the InGaAs-capped QR structure have revealed its potential application in multi-wavelength light-emitting devices in the near infrared range. | en_US |
| dc.identifier.doi | 10.1109/LPT.2012.2229700 | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LPT.2012.2229700 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20788 | |
| dc.identifier.wosnumber | WOS:000312890100027 | |
| dc.language.iso | en_US | en_US |
| dc.subject | GaSb quantum rings | en_US |
| dc.subject | light-emitting devices | en_US |
| dc.title | Improved 1.3-mu m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature | en_US |
| dc.type | Article | en_US |