Efficient improvement of hot-carrier-induced device's degradation for sub-0.1 mu m complementary metal-oxide-semiconductor field-effect-transistor technology
| dc.citation.epage | 1741 | en_US |
| dc.citation.issue | 4B | en_US |
| dc.citation.spage | 1737 | en_US |
| dc.citation.volume | 43 | en_US |
| dc.contributor.author | Lin, JC | en_US |
| dc.contributor.author | Yeh, WK | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:39:26Z | |
| dc.date.available | 2014-12-08T15:39:26Z | |
| dc.date.issued | 2004-04-01 | en_US |
| dc.description.abstract | The effect of post-thermal annealing (PA) after In-halo and As-halo implantation on the reliability of sub-0.1 mum complementary metal-oxide-semiconductor field-effect-transistors was investigated. We found that the control of annealing time is more efficient than that of annealing temperature with respect to improving hot-carrier-induced device's degradation. The optimal results of device performance as well as of reliability can be obtained with post-annealing treatment performed at medium temperatures (e.g.. 900degreesC) for a longer time. | en_US |
| dc.identifier.doi | 10.1143/JJAP.43.1737 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.43.1737 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26921 | |
| dc.identifier.wosnumber | WOS:000221510800016 | |
| dc.language.iso | en_US | en_US |
| dc.subject | halo | en_US |
| dc.subject | indium | en_US |
| dc.subject | post-thermal annealing | en_US |
| dc.subject | hot-carrier-induced device degradation | en_US |
| dc.title | Efficient improvement of hot-carrier-induced device's degradation for sub-0.1 mu m complementary metal-oxide-semiconductor field-effect-transistor technology | en_US |
| dc.type | Article; Proceedings Paper | en_US |