Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold Swing

Abstract

We demonstrate a low-voltage driven, indium gallium zinc oxide thin-film transistor using high-kappa LaAlO3 gate dielectric. A low V-T of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm(2)Ns and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.