Ultrabroadband terahertz field detection by proton-bombarded InP photoconductive antennas
| dc.citation.epage | 2959 | en_US |
| dc.citation.issue | 13 | en_US |
| dc.citation.spage | 2954 | en_US |
| dc.citation.volume | 12 | en_US |
| dc.citation.woscount | 22 | |
| dc.contributor.author | Liu, TA | en_US |
| dc.contributor.author | Tani, M | en_US |
| dc.contributor.author | Nakajima, M | en_US |
| dc.contributor.author | Hangyo, M | en_US |
| dc.contributor.author | Sakai, K | en_US |
| dc.contributor.author | Nakashima, S | en_US |
| dc.contributor.author | Pan, CL | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:38:56Z | |
| dc.date.available | 2014-12-08T15:38:56Z | |
| dc.date.issued | 2004-06-28 | en_US |
| dc.description.abstract | Photoconductive ( PC) antennas fabricated on InP bombarded with 180 keV protons of different dosages (InP:H+) all exhibit a useful bandwidth of about 30 THz, comparable to that of the LT-GaAs PC antenna. The peak signal current of the best InP: H+ device (dosage of 10(15) ions/cm(2)) is slightly higher than that of the LT-GaAs one, while the signal-to-noise ratio (SNR) of the former is about half of that of the latter due to lower resistivity. This suggests that InP: H+ can be a good substrate for THz PC antennas with proper annealing and/or implantation recipe. (C) 2004 Optical Society of America. | en_US |
| dc.identifier.doi | 10.1364/OPEX.12.002954 | en_US |
| dc.identifier.issn | 1094-4087 | en_US |
| dc.identifier.journal | OPTICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OPEX.12.002954 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26659 | |
| dc.identifier.wosnumber | WOS:000222321200019 | |
| dc.language.iso | en_US | en_US |
| dc.title | Ultrabroadband terahertz field detection by proton-bombarded InP photoconductive antennas | en_US |
| dc.type | Article | en_US |