Type-II GaAs0.5Sb0.5/InP Uni-Traveling Carrier Photodiodes With Sub-Terahertz Bandwidth and High-Power Performance Under Zero-Bias Operation

Abstract

We successfully demonstrate ultrafast uni-traveling carrier photodiodes (PD) with sub-terahertz bandwidth (similar to 170 GHz) and high-power performance under zero bias and at 1.55-mu m optical wavelength operation. By using a type-II (GaAs0.5Sb0.5/InP) absorption-collector interface and inserting an n-type (1 x 1018 cm(-3)) charge layer in the collector, the current blocking (Kirk) effect can be greatly minimized. A stack of undoped Al-x In0.52Ga0.48-x As layers with different Aluminum mole fractions (x: 0.2 to 0.08) and bandgaps is adopted as the collector layer. This graded-bandgap design can provide a built-in electric field and further shorten the internal collector transit time. The demonstrated PD structure achieves a 3-dB optical-to-electrical bandwidth of 170 GHz and subterahertz output power -11.3 dBm at 170 GHz, a record among all the reported zero-bias PDs.