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An integral equation method for epitaxial step-flow growth simulations

dc.citation.epage743en_US
dc.citation.issue2en_US
dc.citation.spage724en_US
dc.citation.volume216en_US
dc.citation.woscount5
dc.contributor.authorHuang, JFen_US
dc.contributor.authorLai, MCen_US
dc.contributor.authorXiang, Yen_US
dc.contributor.department應用數學系zh_TW
dc.contributor.departmentDepartment of Applied Mathematicsen_US
dc.date.accessioned2014-12-08T15:16:02Z
dc.date.available2014-12-08T15:16:02Z
dc.date.issued2006-08-10en_US
dc.description.abstractIn this paper, we describe an integral equation approach for simulating diffusion problems with moving interfaces. The solutions are represented as moving layer potentials where the unknowns are only defined on the interfaces. The resulting integro-differential equation (IDE) system is solved using spectral deferred correction (SDC) techniques developed for general differential algebraic equations (DAEs), and the time dependent potentials are evaluated efficiently using fast convolution algorithms. The numerical solver is applied to the BCF model for the epitaxial step-flow growth of crystals, for which the solutions are calculated accurately instead of using quasi-static approximations. Numerical results in 1 + 1 dimensions are compared with available results in the literature. (c) 2006 Elsevier Inc. All rights reserved.en_US
dc.identifier.doi10.1016/j.jcp.2006.01.006en_US
dc.identifier.issn0021-9991en_US
dc.identifier.journalJOURNAL OF COMPUTATIONAL PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcp.2006.01.006en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/11924
dc.identifier.wosnumberWOS:000238586300014
dc.language.isoen_USen_US
dc.subjectintegral equationen_US
dc.subjectpotential theoryen_US
dc.subjectdiffusion equationen_US
dc.subjectjump conditionsen_US
dc.subjectepitaxial step-flowen_US
dc.subjectspectral deferred correctionen_US
dc.subjectfast algorithmsen_US
dc.titleAn integral equation method for epitaxial step-flow growth simulationsen_US
dc.typeArticleen_US

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