Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers
| dc.citation.epage | en_US | |
| dc.citation.issue | 9 | en_US |
| dc.citation.volume | 52 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Zhan, Runze | en_US |
| dc.contributor.author | Dong, Chengyuan | en_US |
| dc.contributor.author | Yang, Bo-Ru | en_US |
| dc.contributor.author | Shieh, Han-Ping D. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:31:53Z | |
| dc.date.available | 2014-12-08T15:31:53Z | |
| dc.date.issued | 2013-09-01 | en_US |
| dc.description.abstract | A high-performance amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) was achieved using a double stacked channel layer (DSCL). An oxygen-poor IGZO film was deposited in pure argon ambient as a buffer layer to prevent oxygen plasma bombardment and improve device performance. An oxygen-rich IGZO film was then deposited on top of that buffer layer to modulate device stability. With this structure, an interface with low oxygen-plasma-induced damage and few oxygen vacancies in the bulk was achieved using DSCL, leading to a higher stability of the threshold voltage. (C) 2013 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.7567/JJAP.52.090205 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.7567/JJAP.52.090205 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22521 | |
| dc.identifier.wosnumber | WOS:000323884300006 | |
| dc.language.iso | en_US | en_US |
| dc.title | Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers | en_US |
| dc.type | Article | en_US |