Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
| dc.citation.epage | en_US | |
| dc.citation.issue | 6 | en_US |
| dc.citation.volume | 6 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Hai Dang Trinh | en_US |
| dc.contributor.author | Minh Thuy Nguyen | en_US |
| dc.contributor.author | Lin, Yueh Chin | en_US |
| dc.contributor.author | Quoc Van Duong | en_US |
| dc.contributor.author | Hong Quan Nguyen | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:31:26Z | |
| dc.date.available | 2014-12-08T15:31:26Z | |
| dc.date.issued | 2013-06-01 | en_US |
| dc.description.abstract | From the Fowler-Nordheim (FN) current-voltage (I-V) characteristic and X-ray photoelectron spectroscopy (XPS) analysis, the conduction band offset of 2.73 +/- 0.1 eV and the valence band offset of 3.76 +/- 0.1 eV have been extracted for the atomic-layer-deposition (ALD) Al2O3/InSb structure. By these analyses, the parameters of an Al2O3 film including bandgap, electron affinity, and electron effective mass are also deduced. The capacitance-voltage and I-V characteristics of ALD Al2O3/InSb at different deposition temperatures indicate the modification of the Fermi level in InSb to 0.09 eV lower than that in metal side of the sample deposited at 250 degrees C as compared to the samples deposited at lower temperatures. (C) 2013 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.7567/APEX.6.061202 | en_US |
| dc.identifier.issn | 1882-0778 | en_US |
| dc.identifier.journal | APPLIED PHYSICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.7567/APEX.6.061202 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22336 | |
| dc.identifier.wosnumber | WOS:000320167300006 | |
| dc.language.iso | en_US | en_US |
| dc.title | Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures | en_US |
| dc.type | Article | en_US |