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Enhanced performance and reliability for solid-phase crystallized poly-Si TFTs with argon ion implantation (vol 154, pg J375, 2007)

dc.citation.epageS4en_US
dc.citation.issue2en_US
dc.citation.spageS4en_US
dc.citation.volume155en_US
dc.citation.woscount0
dc.contributor.authorChang, Chia-Wenen_US
dc.contributor.authorDeng, Chih-Kangen_US
dc.contributor.authorChang, Che-Lunen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:12:56Z
dc.date.available2014-12-08T15:12:56Z
dc.date.issued2008en_US
dc.identifier.doi10.1149/1.2821307en_US
dc.identifier.issn0013-4651en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.2821307en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/9979
dc.identifier.wosnumberWOS:000251906800081
dc.language.isoen_USen_US
dc.titleEnhanced performance and reliability for solid-phase crystallized poly-Si TFTs with argon ion implantation (vol 154, pg J375, 2007)en_US
dc.typeCorrectionen_US

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