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Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency

dc.citation.epage160en_US
dc.citation.issue2en_US
dc.citation.spage157en_US
dc.citation.volume138en_US
dc.citation.woscount7
dc.contributor.authorLee, Y. J.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.contributor.authorHsu, T. C.en_US
dc.contributor.authorHsieh, M. H.en_US
dc.contributor.authorJou, M. J.en_US
dc.contributor.authorLee, B. J.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:14:28Z
dc.date.available2014-12-08T15:14:28Z
dc.date.issued2007-03-25en_US
dc.description.abstractA chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.mseb.2006.11.015en_US
dc.identifier.issn0921-5107en_US
dc.identifier.journalMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mseb.2006.11.015en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/11013
dc.identifier.wosnumberWOS:000248366900011
dc.language.isoen_USen_US
dc.subjectchemical wet etchingen_US
dc.subjectAlGaInP-based LEDsen_US
dc.subjectnano-rougheningen_US
dc.titleNano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiencyen_US
dc.typeArticleen_US

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