High-Performance InGaN-Based Green Resonant-Cavity Light-Emitting Diodes for Plastic Optical Fiber Applications

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dc.citation.epage4090en_US
dc.citation.issue18en_US
dc.citation.spage4084en_US
dc.citation.volume27en_US
dc.citation.woscount5
dc.contributor.authorHuang, Shih-Yungen_US
dc.contributor.authorHorng, Ray-Huaen_US
dc.contributor.authorShi, Jin-Weien_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWuu, Dong-Singen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:08:43Z
dc.date.available2014-12-08T15:08:43Z
dc.date.issued2009-09-15en_US
dc.description.abstractHigh-performance InGaN-based green resonant-cavity light-emitting diodes (RCLEDs) with a plating Cu substrate for plastic optical fiber communication applications are reported. Good stability of emission wavelength was obtained at 0.016 nm/mA. The RCLEDs presents low temperature dependence, showing only a 3% drop in light output power as the temperature increasing from 25 to 85 degrees C. The superior performance can be attributed to the decreased dynamic series resistance and the enhanced thermal dissipation of the heat sink substrate.en_US
dc.identifier.doi10.1109/JLT.2009.2022283en_US
dc.identifier.issn0733-8724en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2009.2022283en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/6673
dc.identifier.wosnumberWOS:000269214900003
dc.language.isoen_USen_US
dc.subjectInGaNen_US
dc.subjectoptical fiberen_US
dc.subjectresonant-cavity light-emitting diode (RCLED)en_US
dc.titleHigh-Performance InGaN-Based Green Resonant-Cavity Light-Emitting Diodes for Plastic Optical Fiber Applicationsen_US
dc.typeArticleen_US

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