Improvement of low-temperature gate dielectric formed in N2O plasma by an additional CF4 pretreatment process
| dc.citation.epage | 391 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 389 | en_US |
| dc.citation.volume | 23 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Chang, TY | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Wen, HC | en_US |
| dc.contributor.author | Chen, HW | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:42:14Z | |
| dc.date.available | 2014-12-08T15:42:14Z | |
| dc.date.issued | 2002-07-01 | en_US |
| dc.description.abstract | This study describes a novel technique to form low temperature oxide (<350 &DEG;C). Low-temperature oxides were formed by N2O plasma in the plasma-enhanced chemical vapor deposition (PECVD) system with a CF4 pretreatment. These oxides demonstrate excellent current-voltage (I-V) characteristics comparable to thermally grown oxides. Experimental results indicate that CF4 plasma treatment can significantly improve the reliability of low-temperature oxides. With excellent electrical properties, the technique is highly promising for low-temperature processes. | en_US |
| dc.identifier.doi | 10.1109/LED.2002.1015208 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2002.1015208 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28684 | |
| dc.identifier.wosnumber | WOS:000176491000005 | |
| dc.language.iso | en_US | en_US |
| dc.subject | low-temperature oxide | en_US |
| dc.subject | metal gate | en_US |
| dc.subject | N2O/CF4 plasma | en_US |
| dc.subject | TDDB and GOI | en_US |
| dc.title | Improvement of low-temperature gate dielectric formed in N2O plasma by an additional CF4 pretreatment process | en_US |
| dc.type | Article | en_US |