InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd : YVO4 laser at 1342 nm
| dc.citation.epage | 1484 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 1482 | en_US |
| dc.citation.volume | 30 | en_US |
| dc.citation.woscount | 18 | |
| dc.contributor.author | Su, KW | en_US |
| dc.contributor.author | Lai, HC | en_US |
| dc.contributor.author | Li, A | en_US |
| dc.contributor.author | Chen, YF | en_US |
| dc.contributor.author | Huang, KE | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:18:52Z | |
| dc.date.available | 2014-12-08T15:18:52Z | |
| dc.date.issued | 2005-06-15 | en_US |
| dc.description.abstract | We report that lnAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO4 lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained. (c) 2005 Optical Society of America | en_US |
| dc.identifier.doi | 10.1364/OL.30.001482 | en_US |
| dc.identifier.issn | 0146-9592 | en_US |
| dc.identifier.journal | OPTICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OL.30.001482 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13580 | |
| dc.identifier.wosnumber | WOS:000229689400018 | |
| dc.language.iso | en_US | en_US |
| dc.title | InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd : YVO4 laser at 1342 nm | en_US |
| dc.type | Article | en_US |
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