Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process
| dc.citation.epage | 362 | en_US |
| dc.citation.issue | 3-4 | en_US |
| dc.citation.spage | 357 | en_US |
| dc.citation.volume | 247 | en_US |
| dc.citation.woscount | 198 | |
| dc.contributor.author | Li, SY | en_US |
| dc.contributor.author | Lee, CY | en_US |
| dc.contributor.author | Tseng, TY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:41:31Z | |
| dc.date.available | 2014-12-08T15:41:31Z | |
| dc.date.issued | 2003-01-01 | en_US |
| dc.description.abstract | The ZnO nanowires were synthesized using vapor liquid-solid (VLS) growth process on copper coated p-type Si (100) Substrate. Copper catalyzed the growth of ZnO nanowires of diameters 80-150 nm and lengths of 2.5-4.0 mum. The ZnO nanowires had hexagonal structure and exhibited <0002> orientation. The photoluminescence measurements showed that the ZnO nanowires had a strong ultraviolet emission at around 381 nm and a very weak green emission around 520 nm. (C) 2002 Elsevier Science B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S0022-0248(02)01918-8 | en_US |
| dc.identifier.issn | 0022-0248 | en_US |
| dc.identifier.journal | JOURNAL OF CRYSTAL GROWTH | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0022-0248(02)01918-8 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28228 | |
| dc.identifier.wosnumber | WOS:000180362900015 | |
| dc.language.iso | en_US | en_US |
| dc.subject | nanostructures | en_US |
| dc.subject | vapor-liquid-solid growth | en_US |
| dc.subject | zinc oxide nanowire | en_US |
| dc.subject | semiconducting materials | en_US |
| dc.subject | optical devices | en_US |
| dc.title | Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process | en_US |
| dc.type | Article | en_US |