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HYDROGEN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM DODECAMETHYLCYCLOHEXASILANE

dc.citation.epage539en_US
dc.citation.issue8en_US
dc.citation.spage537en_US
dc.citation.volume12en_US
dc.citation.woscount9
dc.contributor.authorCHIU, HTen_US
dc.contributor.authorHUANG, SCen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.date.accessioned2014-12-08T15:04:33Z
dc.date.available2014-12-08T15:04:33Z
dc.date.issued1993-04-15en_US
dc.identifier.issn0261-8028en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE LETTERSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/3049
dc.identifier.wosnumberWOS:A1993KZ35100005
dc.language.isoen_USen_US
dc.titleHYDROGEN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM DODECAMETHYLCYCLOHEXASILANEen_US
dc.typeArticleen_US

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