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Improved hot carrier reliability in strained-channel NMOSFETS with TEOS buffer layer

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000246989600146.pdf (2.2 MB)

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2007

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10.1109/RELPHY.2007.369562

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http://dx.doi.org/10.1109/RELPHY.2007.369562
 https://ir.lib.nycu.edu.tw/handle/11536/7212

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會議論文;;Conferences Paper

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