Improved hot carrier reliability in strained-channel NMOSFETS with TEOS buffer layer
| dc.citation.epage | 671 | en_US |
| dc.citation.spage | 670 | en_US |
| dc.contributor.author | Lu, Ching-Sen | en_US |
| dc.contributor.author | Lin, Horng-Chih | en_US |
| dc.contributor.author | Lee, Yao-Jen | en_US |
| dc.contributor.author | Huang, Tiao-Yuan | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:09:26Z | |
| dc.date.available | 2014-12-08T15:09:26Z | |
| dc.date.issued | 2007 | en_US |
| dc.identifier.doi | 10.1109/RELPHY.2007.369562 | en_US |
| dc.identifier.isbn | 978-1-4244-0918-1 | en_US |
| dc.identifier.journal | 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/RELPHY.2007.369562 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7212 | |
| dc.identifier.wosnumber | WOS:000246989600146 | |
| dc.language.iso | en_US | en_US |
| dc.title | Improved hot carrier reliability in strained-channel NMOSFETS with TEOS buffer layer | en_US |
| dc.type | Article | en_US |