The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors
| dc.citation.epage | en_US | |
| dc.citation.issue | 5 | en_US |
| dc.citation.volume | 106 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Lin, Wei-Hsun | en_US |
| dc.contributor.author | Chao, Kuang-Ping | en_US |
| dc.contributor.author | Tseng, Chi-Che | en_US |
| dc.contributor.author | Mai, Shu-Cheng | en_US |
| dc.contributor.author | Lin, Shih-Yen | en_US |
| dc.contributor.author | Wu, Meng-Chyi | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:08:51Z | |
| dc.date.available | 2014-12-08T15:08:51Z | |
| dc.date.issued | 2009-09-01 | en_US |
| dc.description.abstract | The influence of an additional InGaAs-capped layer on the performance of InAs/GaAs quantum-dot infrared photodetectors (QDIPs) is investigated. For the device with a 15% InGaAs-capped layer, a significant response at 7.9 mu m is observed for the QDIP device. The results suggest that with the additional InGaAs-capped layer, the detection wavelengths of the InAs/GaAs QDIPs could be shifted to a longer-wavelength infrared range. A further increase in the In composition will not help to obtain an even longer-wavelength detection, which is attributed to the cancellation of a lower InGaAs state, and InAs-QD bandgap shrinkage resulted from the relaxed compressive strains of the InGaAs layer with a higher In composition. | en_US |
| dc.identifier.doi | 10.1063/1.3212983 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3212983 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6750 | |
| dc.identifier.wosnumber | WOS:000269850300129 | |
| dc.language.iso | en_US | en_US |
| dc.subject | compressive strength | en_US |
| dc.subject | energy gap | en_US |
| dc.subject | gallium arsenide | en_US |
| dc.subject | III-V semiconductors | en_US |
| dc.subject | indium compounds | en_US |
| dc.subject | infrared detectors | en_US |
| dc.subject | photodetectors | en_US |
| dc.subject | semiconductor quantum dots | en_US |
| dc.title | The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors | en_US |
| dc.type | Article | en_US |