Bipolar switching characteristics of low-power Geo resistive memory
| dc.citation.epage | 93 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 90 | en_US |
| dc.citation.volume | 62 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Cheng, C. H. | en_US |
| dc.contributor.author | Chen, P. C. | en_US |
| dc.contributor.author | Liu, S. L. | en_US |
| dc.contributor.author | Wu, T. L. | en_US |
| dc.contributor.author | Hsu, H. H. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.author | Yeh, F. S. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:29:30Z | |
| dc.date.available | 2014-12-08T15:29:30Z | |
| dc.date.issued | 2011-08-01 | en_US |
| dc.description.abstract | We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO(x) dielectric. This cost-effective Ni/GeO(x)/TaN RRAM device has very small set power of 2 mu W, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 degrees C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM. (C) 2011 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.sse.2011.04.010 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.sse.2011.04.010 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21216 | |
| dc.identifier.wosnumber | WOS:000292444000015 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Resistive random access memory (RRAM) | en_US |
| dc.subject | Germanium oxide (GeO(2)) | en_US |
| dc.title | Bipolar switching characteristics of low-power Geo resistive memory | en_US |
| dc.type | Article | en_US |