Dynamic NBTI characteristics of PMOSFETs with PE-SiN capping
| dc.citation.epage | 929 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 924 | en_US |
| dc.citation.volume | 47 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Lu, C. Y. | en_US |
| dc.contributor.author | Lin, H. C. | en_US |
| dc.contributor.author | Lee, Y. J. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:13:52Z | |
| dc.date.available | 2014-12-08T15:13:52Z | |
| dc.date.issued | 2007-06-01 | en_US |
| dc.description.abstract | Negative-bias-temperature instability (NBTI) characteristics of strained p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) under dynamic and AC stressing were investigated in this work. The compressive strain in the channel was deliberately induced by a plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) capping layer in this study. It was found that the capping would degrade the NBTI characteristics, although the degradation is relieved when the stress frequency increases. The aggravated NBTI behaviors are ascribed to the higher amount of hydrogen incorporation during SiN deposition. (c) 2006 Published by Elsevier Ltd. | en_US |
| dc.identifier.doi | 10.1016/j.microrel.2006.06.004 | en_US |
| dc.identifier.issn | 0026-2714 | en_US |
| dc.identifier.journal | MICROELECTRONICS RELIABILITY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.microrel.2006.06.004 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10717 | |
| dc.identifier.wosnumber | WOS:000247185800011 | |
| dc.language.iso | en_US | en_US |
| dc.title | Dynamic NBTI characteristics of PMOSFETs with PE-SiN capping | en_US |
| dc.type | Article | en_US |