Growth temperature reduction for isoelectronic As-doped GaN
| dc.citation.epage | L242 | en_US |
| dc.citation.issue | 3A | en_US |
| dc.citation.spage | L239 | en_US |
| dc.citation.volume | 42 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Lee, WH | en_US |
| dc.contributor.author | Huang, HY | en_US |
| dc.contributor.author | Chen, WC | en_US |
| dc.contributor.author | Lee, CF | en_US |
| dc.contributor.author | Chen, WK | en_US |
| dc.contributor.author | Chen, WH | en_US |
| dc.contributor.author | Lee, MC | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:41:17Z | |
| dc.date.available | 2014-12-08T15:41:17Z | |
| dc.date.issued | 2003-03-01 | en_US |
| dc.description.abstract | As-doped GaN films were grown at different temperatures by atmospheric metalorganic chemical vapor deposition. A higher electron Hall mobility, narrower line width in photoluminescence, and longer spatial correlation length of the filmes were obtainable at low growth temperatures compared to undoped GaN grown at the same temperatures as a result of isoelectronic As-doping. | en_US |
| dc.identifier.doi | 10.1143/JJAP.42.L239 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.42.L239 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28077 | |
| dc.identifier.wosnumber | WOS:000184396200011 | |
| dc.language.iso | en_US | en_US |
| dc.subject | GaN | en_US |
| dc.subject | isoelectronic As-doping | en_US |
| dc.subject | Raman scattering | en_US |
| dc.subject | spatial correlation length | en_US |
| dc.subject | photoluminescence | en_US |
| dc.subject | Hall mobility | en_US |
| dc.title | Growth temperature reduction for isoelectronic As-doped GaN | en_US |
| dc.type | Article | en_US |