Critical point energy as a function of electric field determined by electroreflectance of surface-intrinsic-n(+) type doped GaAs
| dc.citation.epage | 4066 | en_US |
| dc.citation.issue | 18 | en_US |
| dc.citation.spage | 4064 | en_US |
| dc.citation.volume | 85 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Chen, YS | en_US |
| dc.contributor.author | Wu, KS | en_US |
| dc.contributor.author | Wang, DP | en_US |
| dc.contributor.author | Huang, KF | en_US |
| dc.contributor.author | Huang, TC | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:37:19Z | |
| dc.date.available | 2014-12-08T15:37:19Z | |
| dc.date.issued | 2004-11-01 | en_US |
| dc.description.abstract | Electroreflectance of surface-intrinsic-n(+) type doped GaAs has been measured over a various biased voltage. The spectra have exhibited many Franz-Keldysh oscillations (FKOs) above band gap energy E-g. The electric field F and critical point energy E-c can be determined from the slope and intercept of FKOs fitting. Hence, we can obtain E-c as a function of F. In most of previous works, E-c is taken as E-g. However, it was found that E-c increases with F in this work. In order to explain this, the gain of energy of electron and hole in F was discussed. (C) 2004 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1814794 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1814794 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25655 | |
| dc.identifier.wosnumber | WOS:000224894900036 | |
| dc.language.iso | en_US | en_US |
| dc.title | Critical point energy as a function of electric field determined by electroreflectance of surface-intrinsic-n(+) type doped GaAs | en_US |
| dc.type | Article | en_US |