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Selective growth of carbon nanotube on scanning probe tips by microwave plasma chemical vapor deposition

dc.citation.epage93en_US
dc.citation.issue1en_US
dc.citation.spage90en_US
dc.citation.volume22en_US
dc.citation.woscount3
dc.contributor.authorPan, FMen_US
dc.contributor.authorLiu, YBen_US
dc.contributor.authorChang, Yen_US
dc.contributor.authorChen, CYen_US
dc.contributor.authorTsai, TGen_US
dc.contributor.authorChang, MNen_US
dc.contributor.authorSheu, JTen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:39:50Z
dc.date.available2014-12-08T15:39:50Z
dc.date.issued2004-01-01en_US
dc.description.abstractWe have selectively grown carbon nanotubes on the probe tip of an atomic force microscope by microwave plasma chemical vapor deposition. The catalyst domain was defined on the tip apex of an Si based scanning probe by local electric field induced oxidation of a TiN cap layer, under which the cobalt catalyst layer was predeposited on the probe surface. High resolution atomic force microscopy images of an SiO2 trench pattern are demonstrated using the carbon nanotube tip. The nanotube tip fabrication method is simple and compatible with existing thin film process technology. (C) 2004 American Vacuum Society.en_US
dc.identifier.issn1071-1023en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/27226
dc.identifier.wosnumberWOS:000220573800020
dc.language.isoen_USen_US
dc.titleSelective growth of carbon nanotube on scanning probe tips by microwave plasma chemical vapor depositionen_US
dc.typeArticleen_US

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